@INPROCEEDINGS{mine:isscc_2015_TD_sensor,
author={Rui Quan and Ugur Sonmez and Fabio Sebastiano and, Kofi A.A. Makinwa},
booktitle={International Solid-state Circuits Conference Digest of Technical Papers},
address="San Francisco, CA",
title={A 4600µm² 1.5°C (3σ) 0.9{kS/s} thermal-diffusivity temperature sensor with VCO-based readout},
year={2015},
month={Feb},
pages={488 - 489},
abstract={This paper presents a highly digital thermal-diffusivity temperature sensor in 0.16µm CMOS for SoC thermal monitoring. The sensor occupies only 4600µm², which is the smallest for designs above 32nm and is one of the smallest ever reported. It also achieves ±1.5°C (3σ, single trim) inaccuracy and 0.6$^circ$C resolution at a 0.9kS/s sampling rate. This small area implementation is mainly enabled by the adoption of a VCO-based phase-domain ADC whose area is 70% digital.},
keywords={Accuracy;CMOS integrated circuits;Modulation;Radiation detectors;Temperature sensors},
doi={10.1109/ISSCC.2015.7063139},}

@INPROCEEDINGS{mine:isscc_2016_ugur,
author={Ugur Sönmez and Fabio Sebastiano and Kofi A.A. Makinwa},
booktitle={International Solid-state Circuits Conference Digest of Technical Papers},
address="San Francisco, CA",
title="1650µm² Thermal-Diffusivity Sensors with Inaccuracies Down to ±0.75$^\circ$C in 40nm {CMOS}",
year={2016},
pages={206-207},
abstract={This work presents a thermal diffusivity (TD) sensor realized in nanometer (40nm) CMOS that demonstrates that the performance of such sensors continues to improve with scaling. Without trimming, the sensor achieves �1.4�C (3s) inaccuracy from -40 to 125�C, which is a 5� improvement over previous (non-TD) sensors intended for thermal monitoring. This improves to �0.75�C (3s) after a single-point trim, a level of accuracy that previously would have required two-point trimming. Furthermore, it operates from supply voltages as low as 0.9V, and occupies only 1650 �m2, making it one of the smallest smart temperature sensors reported to date. These advances are enabled by the use of a phase-calibration scheme and a highly digital phase-domain ?S ADC.},
keywords={CMOS integrated circuits;calibration;delta-sigma modulation;temperature sensors;thermal diffusivity;CMOS;digital phase-domain ?S ADC;phase-calibration scheme;scaling;single-point trim;size 40 nm;smart temperature sensors;temperature -40 degC to 125 degC;thermal monitoring;thermal-diffusivity sensors;CMOS integrated circuits;Monitoring;Radiation detectors;Temperature measurement;Temperature sensors},
doi={10.1109/ISSCC.2016.7417979},
month={Jan}}

@inproceedings{mine:isscc_2014_amplifier,
author = "Fabio Sebastiano and Federico Butti and Robert H.M. van Veldhoven and Paolo Bruschi",
month = feb # {9--13},
year = "2014",
title="A 0.07mm² 2-Channel Instrumentation Amplifier with 0.1% Gain Matching in 0.16µm {CMOS}",
booktitle={International Solid-state Circuits Conference Digest of Technical Papers},
pages={294 - 295},
abstract={Extremely small-area sensor front-ends are required for cost-constrained automotive applications. Instrumentation amplifiers (IA) for such front-ends must process multi-channel sensor outputs and provide gain matching over the channels for proper sensor operation. Angular sensors are a typical example, in which the sine and cosine outputs of a resistive magnetic sensor must be processed with adequate gain matching to avoid unacceptable angular errors. This paper presents a 2-channel instrumentation amplifier in 0.16µm CMOS with 0.1% gain matching and occupying 0.035mm2 per channel. This represents a 13.3x area improvement with respect to state-of-the-art designs with similar gain accuracy [1]-[4], while maintaining low noise (18.7nV/√Hz), low offset (17µV) and high power efficiency (NEF=12.9). The accurate gain matching in a limited area is enabled by the adoption of a dynamic element matching (DEM) scheme and by the use of a high chopping frequency.},
keywords={CMOS integrated circuits;instrumentation amplifiers;2-channel instrumentation amplifier;CMOS;DEM scheme;IA;angular sensors;cosine outputs;cost-constrained automotive applications;dynamic element matching scheme;gain matching;high chopping frequency;multichannel sensor outputs;resistive magnetic sensor;sensor front-ends;sensor operation;size 0.16 mum;voltage 17 muV;Accuracy;CMOS integrated circuits;Gain measurement;Instruments;Noise measurement;Solid state circuits;Switches},
address="San Francisco, CA",
doi={10.1109/ISSCC.2014.6757440},
ISSN={0193-6530},
}

@INPROCEEDINGS{mine:esscirc_2013_sigmadelta,
author = "Fabio Sebastiano and Robert H.M. van Veldhoven",
booktitle="Proc. {European Solid-State Circuits Conference}",
title="A 0.1-mm² 3-Channel Area-Optimized ΣΔ {ADC} in 0.16-µm {CMOS} with {20-kHz} {BW} and {86-dB DR}",
year={2013},
month=sep # {16--20},
address="Bucharest, Romania",
pages={375 - 378},
abstract={Front-ends for automotive sensors must digitize multiple channels with high resolution while minimizing their silicon area to save costs. Both channel latency and inter-channel gain mismatch must be minimized to be able to serve multiple sensor applications, ranging from ABS to power steering, with the same front-end. The proposed S? ADC simultaneously digitizes 3 channels, each with a DR of 86 dB over a 20-kHz BW using a 75-MHz clock. Channel latency is <40 ns and inter-channel gain mismatch is <0.2%. The ADC occupies only 0.1 mm² in a 0.16-µm CMOS process. The small area is enabled by channel multiplexing, allowing component sharing among the channels, and by the large oversampling ratio (OSR), allowing for smaller capacitors.},
keywords={CMOS integrated circuits;analogue-digital conversion;automotive electronics;delta-sigma modulation;3-channel area-optimized S? ADC;CMOS;automotive sensors;capacitors;channel latency;channel multiplexing;frequency 20 kHz;frequency 75 MHz;front-ends;inter-channel gain mismatch;oversampling ratio;size 0.16 mum;Capacitors;Crosstalk;Gain;Modulation;Multiplexing;Noise;Sensors},
doi={10.1109/ESSCIRC.2013.6649151},
ISSN={1930-8833}
}

@inproceedings{mine:isscc_2013_selcuk,
author = "Sel\c{c}uk Ersoy and Robert H.M. van Veldhoven and Fabio Sebastiano and Klaus Reimann",
month = feb # {17--21},
year = "2013",
title="A 0.25mm² {AC}-Biased {MEMS} Microphone Interface with {58dBA SNR}",
booktitle={International Solid-state Circuits Conference Digest of Technical Papers},
pages="382-383",
address="San Francisco, CA",
abstract={Capacitive MEMS microphone roadmaps are mainly driven by increasing SNR and reducing size/cost. This requires smaller microphones, ASICs with lower noise and smaller area, and cheaper packaging. Because of fundamental limitations, traditional DC-biased microphones will have difficulty following these trends. This paper proposes an AC-biasing scheme, which leads to a significant reduction in ASIC size and module packaging cost.},
keywords={AC machines;DC machines;capacitance;electronics packaging;micromechanical devices;microphones;AC-biased MEMS microphone interface;AC-biasing scheme;ASIC size reduction;DC-biased microphone;SNR;capacitive MEMS microphone roadmap;module packaging cost;noise},
doi={10.1109/ISSCC.2013.6487779},
ISSN={0193-6530}
}

@book{mine:book_mobility,
author = "Fabio Sebastiano and Lucien J. Breems and Kofi A.A. Makinwa",
title = "Mobility-based Time References for Wireless Sensor Networks",
publisher = "Springer",
year = "2013",
abstract  = {This book describes the use of low-power low-cost and extremely small radios to provide essential time reference for wireless sensor networks. The authors explain how to integrate such radios in a standard CMOS process to reduce both cost and size, while focusing on the challenge of designing a fully integrated time reference for such radios. To enable the integration of the time reference, system techniques are proposed and analyzed, several kinds of integrated time references are reviewed, and mobility-based references are identified as viable candidates to provide the required accuracy at low-power consumption. Practical implementations of a mobility-based oscillator and a temperature sensor are also presented, which demonstrate the required accuracy over a wide temperature range, while drawing 51-µW from a 1.2-V supply in a 65-nm CMOS process.}
}

@article{mine:jssc_2009_mobility,
title="A Low-Voltage Mobility-Based Frequency Reference for Crystal-Less {ULP} Radios",
author="Fabio Sebastiano and Lucien J. Breems and Kofi A.A. Makinwa and Salvatore Drago and Domine M.W. Leenaerts and Bram Nauta",
journal=IEEE_J_JSSC,
year={2009},
month=jul,
volume={44},
number={7},
pages={2002 -2009},
abstract={The design of a 100 kHz frequency reference based on the electron mobility in a MOS transistor is presented. The proposed low-voltage low-power circuit requires no off-chip components, making it suitable for application in wireless sensor networks (WSN). After a single-point calibration, the spread of its output frequency is less than 1.1% (3σ) over the temperature range from -22 °C to 85 °C . Fabricated in a baseline 65 nm CMOS technology, the frequency reference circuit occupies 0.11 mm² and draws 34 µA from a 1.2 V supply at room temperature.},
keywords={CMOS integrated circuits;MOSFET;wireless sensor networks;CMOS technology;MOS transistor;crystal-less ULP radios;current 34 muA;electron mobility;frequency 100 kHz;low-voltage low-power circuit;low-voltage mobility-based frequency reference;size 65 nm;temperature -22 degC to 85 degC;temperature 293 K to 298 K;voltage 1.2 V;wireless sensor networks;CMOS technology;Circuits;Electron mobility;Energy consumption;Frequency synchronization;MOSFETs;Oscillators;Silicon;Temperature sensors;Wireless sensor networks;CMOS analog integrated circuits;Charge carrier mobility;crystal-less clock;low voltage;relaxation oscillators;ultra-low power;wireless sensor networks},
doi={10.1109/JSSC.2009.2020247},
ISSN={0018-9200},
}

@ARTICLE{mine:jssc_2011_mobility_comp,
author = "Fabio Sebastiano and Lucien J. Breems and Kofi Makinwa and Salvatore Drago and Domine M. W. Leenaerts and Bram Nauta",
journal=IEEE_J_JSSC,
title="A 65-nm {CMOS} temperature-compensated mobility-based frequency reference for Wireless Sensor Networks",
year={2011},
month=jul,
volume={46},
number={7},
pages={1544 - 1552},
abstract={A temperature-compensated CMOS frequency reference based on the electron mobility in a MOS transistor is presented. Over the temperature range from -55 °C to 125 °C, the frequency spread of the complete reference is less than ±0.5% after a two-point trim and less than ±2.7% after a one-point trim. These results make it suitable for use in Wireless Sensor Network nodes. Fabricated in a baseline 65-nm CMOS process, the 150 kHz frequency reference occupies 0.2 mm² and draws 42.6 µA from a 1.2-V supply at room temperature.},
keywords={CMOS integrated circuits;compensation;electron mobility;wireless sensor networks;MOS transistor;current 42.6 muA;electron mobility;mobility-based frequency reference;size 65 nm;temperature -55 degC to 125 degC;temperature-compensated CMOS frequency reference;two-point trim;voltage 1.2 V;wireless sensor networks;Accuracy;Frequency conversion;Oscillators;Temperature;Temperature measurement;Temperature sensors;Wireless sensor networks;CMOS integrated circuits;Charge carrier mobility;MOSFET;crystal-less clock;frequency reference;low voltage;sigma-delta modulation;smart sensors;temperature compensation;temperature sensors;ultra-low power;wireless sensor networks},
doi={10.1109/JSSC.2011.2143630},
ISSN={0018-9200}
}

@inproceedings{mine:iscas_2008_wsn,
author = "Fabio Sebastiano and Salvatore Drago and Lucien J. Breems and Domine M.W. Leenaerts and Kofi A.A. Makinwa and Bram Nauta",
month = may # {18--21},
year = "2008",
title = "Impulse Based Scheme for Crystal-less {ULP} Radios",
booktitle = "Proc. {IEEE International Symposium on Circuits and Systems}",
pages="1508 - 1511",
abstract={This study describes a method of implementing a fully integrated ultra-low-power (ULP) radio for wireless sensor networks (WSNs). This is achieved using an ad hoc modulation scheme (impulse radio), with a bandwidth of 17.7 MHz in the 2.4 GHz-ISM band and a specific medium access control (MAC) protocol, based on a duty-cycled wake-up radio and a crystal-less clock generator. It is shown that the total average power consumption is expected to be less than 100 µW with a clock generator inaccuracy of only 1%.},
keywords={access protocols;ad hoc networks;clocks;low-power electronics;modulation;ultra wideband communication;wireless sensor networks;ad hoc modulation;crystal-less ULP radio;crystal-less clock generator;duty-cycled wake-up radio;frequency 17.7 MHz;frequency 2.4 GHz;impulse radio;medium access control protocol;power 100 muW;ultra-low-power radio;wireless sensor network;Crystal-less clock;EDICS Category: COMM110A5, COMM200, COMM250A5;impulse radio;ultra-low power (ULP);wake-up radio;wireless sensor network (WSN)},
doi={10.1109/TCSI.2009.2015208},
}

@inproceedings{mine:esscirc_2008_mobility,
title="A Low-Voltage Mobility-Based Frequency Reference for Crystal-Less {ULP} Radios",
author="Fabio Sebastiano and Lucien J. Breems and Kofi A.A. Makinwa and Salvatore Drago and Domine M.W. Leenaerts and Bram Nauta",
booktitle="Proc. {European Solid-State Circuits Conference}",
year="2008",
pages="306 - 309",
month=sep # {15--19},
address="Edinburgh, UK",
abstract={The design of a 100 kHz frequency reference based on the electron mobility in a MOS transistor is presented. The proposed low-voltage low-power circuit requires no off-chip components, making it suitable for Wireless Sensor Networks (WSN) applications. After one-point calibration the spread of its output frequency is less than 1.1% (3σ) over the temperature range from -22 °C to 85 °C. Fabricated in a baseline 65-nm CMOS technology, the frequency reference occupies 0.11 mm² and draws 34 µA from a 1.2-V supply at room temperature.},
keywords={CMOS integrated circuits;MOSFET circuits;electron mobility;integrated circuit design;low-power electronics;mobile radio;wireless sensor networks;MOS transistor;crystal less ULP radios;electron mobility;frequency 100 kHz;low voltage mobility based frequency reference;off-chip components;one point calibration;size 65 nm;temperature -22 degC to 85 degC;voltage 1.2 V;wireless sensor networks;CMOS technology;Calibration;Circuits;Energy consumption;Frequency;Oscillators;Silicon;Temperature distribution;Temperature sensors;Wireless sensor networks},
doi={10.1109/ESSCIRC.2008.4681853},
ISSN={1930-8833}
}

@inproceedings{mine:prorisc_2008_mobility,
author="Fabio Sebastiano and Lucien J. Breems and Kofi A.A. Makinwa and Salvatore Drago and Domine M.W. Leenaerts and Bram Nauta",
title="On the Temperature Compensation of a Frequency Reference for Crystal-Less {ULP} Wireless Sensor Networks",
booktitle="Proc. {ProRISC}",
year="2008",
pages="306 - 309",
month=sep # {27--18},
address="Veldhoven, The Netherlands",
abstract={Each node in a Wireless Sensor Network (WSN) must be provided with a frequency reference to enable network synchronization and RF communication. As the nodes need to be small, cheap and energy efcient, a frequency reference suitable for WSN must show low power consumption and require no off-chip components. A reference based on electron mobility in a MOS transistor demonstrates such features. Its output frequency follows the temperature dependence of mobility, which, although large, is well dened and can be compensated for. It is shown that a temperature sensor with accuracy of only 0.6 °C can be employed for the temperature compensation and that the inaccuracy of a compensated mobility-based frequency reference due to temperature, process spread, voltage supply variations and noise can be as low as 1% on a wide temperature range, fitting radio architectures for WSN applications.}
}

@INPROCEEDINGS{mine:esscirc_2010_mobility_comp,
author = "Fabio Sebastiano and Lucien J. Breems and Kofi Makinwa and Salvatore Drago and Domine M. W. Leenaerts and Bram Nauta",
booktitle="Proc. {European Solid-State Circuits Conference}",
title="A 65-nm {CMOS} temperature-compensated mobility-based frequency reference for Wireless Sensor Networks",
year={2010},
month=sep # {14--16},
pages={102 - 105},
address="Sevilla, Spain",
abstract={For the first time, a temperature-compensated CMOS frequency reference based on the electron mobility in a MOS transistor is presented. Over the temperature range from -55 °C to 125 °C, its frequency spread is less than ±0.5% after a two-point trim and less than ±2.7% after a one-point trim. These results make it suitable for use in Wireless Sensor Network nodes. Fabricated in a baseline 65-nm CMOS process, the 150 kHz frequency reference occupies 0.2 mm² and draws 42.6 µA from a 1.2-V supply at room temperature.},
keywords={CMOS integrated circuits;MOSFET;electron mobility;wireless sensor networks;CMOS temperature-compensated mobility;MOS transistor;current 42.6 muA;electron mobility;frequency 150 kHz;frequency reference;size 65 nm;temperature -55 C to 125 C;voltage 1.2 V;wireless sensor network;Accuracy;CMOS integrated circuits;Calibration;Oscillators;Temperature measurement;Temperature sensors;Wireless sensor networks},
doi={10.1109/ESSCIRC.2010.5619792},
ISSN={1930-8833}
}

@INPROCEEDINGS{mine:esscirc_2011_mobility_cmos14,
author = "Fabio Sebastiano and Lucien J. Breems and Kofi Makinwa and Salvatore Drago and Domine M. W. Leenaerts and Bram Nauta",
booktitle="Proc. {European Solid-State Circuits Conference}",
title="Effects of Packaging and Process Spread on a Mobility-Based Frequency Reference in 0.16-µm {CMOS}",
year={2011},
month=sep # {12-16},
address="Helsinki, Finland",
pages={511 - 514},
abstract={In this paper, we explore the robustness of frequency references based on the electron mobility in a MOS transistor by implementing them with both thin-oxide and thick-oxide MOS transistors in a 0.16-µm CMOS process, and by testing samples packaged in both ceramic and plastic packages. The proposed low-voltage low-power circuit requires no off-chip components, making it suitable for applications requiring fully integrated solutions, such as Wireless Sensor Networks. Over the temperature range from -55 °C to 125 °C, its frequency spread is less than ±1% (3σ) after a one-point trim. Fabricated in a baseline 0.16-µm CMOS process, the 50 kHz frequency reference occupies 0.06 mm² and, at room temperature, its consumption with a 1.2-V supply is less than 17 µW.},
keywords={CMOS integrated circuits;MOSFET;ceramic packaging;electron mobility;low-power electronics;plastic packaging;reference circuits;wireless sensor networks;CMOS process;ceramic packages;electron mobility;frequency 50 kHz;low-voltage low-power circuit;mobility-based frequency reference;off-chip components;packaging;plastic packages;process spread;size 0.16 mum;temperature -55 degC to 125 degC;temperature 293 K to 298 K;thick-oxide MOS transistors;thin-oxide MOS transistors;voltage 1.2 V;wireless sensor networks;Accuracy;Ceramics;Oscillators;Plastics;Temperature distribution;Temperature measurement;Transistors},
doi={10.1109/ESSCIRC.2011.6044934},
ISSN={1930-8833}
}

@INPROCEEDINGS{mine:esscirc_2010_qinwen,
author="Qinwen Fan and Fabio Sebastiano and Johan H. Huijsing and Kofi A.A. Makinwa",
booktitle="Proc. {European Solid-State Circuits Conference}",
title="A 1.8µ{W} 1-µV-offset capacitively-coupled chopper instrumentation amplifier in 65nm {CMOS}",
year={2010},
month=sep # {14--16},
address="Sevilla, Spain",
pages={170 - 173},
abstract={This paper describes a precision capacitively-coupled chopper instrumentation amplifier (CCIA). It achieves 1µV offset, 134dB CMRR, 120dB PSRR, 0.16% gain accuracy and a noise efficiency factor (NEF) of 3.1, which is more than 3x better than state-of-the-art. It has a rail-to-rail DC common-mode (CM) input range. Furthermore, a positive feedback loop (PFL) is used to boost the input impedance, and a ripple reduction loop (RRL) is used to reduce the ripple associated with chopping. The CCIA occupies only 0.1mm² in a 65nm CMOS technology. It can operate from a 1V supply, from which it draws only 1.8µA.},
keywords={CMOS integrated circuits;instrumentation amplifiers;CMOS;input impedance;noise efficiency factor;positive feedback loop;precision capacitively-coupled chopper instrumentation amplifier;rail-to-rail DC common-mode input range;ripple reduction loop;size 65 nm;Accuracy;Choppers;Impedance;Instruments;Noise;Resistors;Topology},
doi={10.1109/ESSCIRC.2010.5619902},
ISSN={1930-8833}
}

@INPROCEEDINGS{mine:asscc_2010_qinwen,
author="Qinwen Fan and Fabio Sebastiano and Johan H. Huijsing and Kofi A.A. Makinwa",
booktitle="Proc. {Asian Solid-State Circuits Conference}",
title="A 2.1 µ{W} Area-Efficient Capacitively-Coupled Chopper Instrumentation Amplifier for ECG Applications in 65 nm {CMOS}",
year={2010},
month=nov # {8--10},
address="Beijing, China",
pages={1 - 4},
abstract={This paper describes a capacitively-coupled chopper instrumentation amplifier for use in electrocardiography (ECG). The amplifier's gain is accurately defined by a capacitive feedback network, while a DC servo loop rejects the DC offset generated by the electrode-tissue interface. The high-pass corner frequency established by the servo loop is realized by an area-efficient switched-capacitor integrator. Additional feedback loops are employed to boost the amplifier's input-impedance to 80 MΩ and to suppress the chopper ripple. Implemented in a 65 nm CMOS technology, the amplifier draws 2.1 µA from a 1 V supply and occupies 0.2 mm².},
keywords={CMOS integrated circuits;amplifiers;biomedical electrodes;choppers (circuits);electrocardiography;CMOS technology;DC servo loop;ECG application;area efficient chopper instrumentation amplifier;capacitive feedback network;capacitively coupled chopper instrumentation amplifier;electrocardiography;electrode-tissue interface;power 2.1 muW;switched capacitor integrator;Choppers;DSL;Earth Observing System;Electrocardiography;Impedance;Instruments;Noise},
doi={10.1109/ASSCC.2010.5716624}
}

@ARTICLE{mine:jssc_2011_qinwen,
author="Qinwen Fan and Fabio Sebastiano and Johan H. Huijsing and Kofi A.A. Makinwa",
journal=IEEE_J_JSSC,
title="A 1.8 µ{W} 60 nV/√{Hz} Capacitively-Coupled Chopper Instrumentation Amplifier in 65 nm {CMOS} for Wireless Sensor Nodes",
year={2011},
month=jul,
volume={46},
number={7},
pages={1534 - 1543},
abstract={This paper presents a low-power precision instrumentation amplifier intended for use in wireless sensor nodes. It employs a capacitively-coupled chopper topology to achieve a rail-to-rail input common-mode range as well as high power efficiency. A positive feedback loop is employed to boost its input impedance, while a ripple reduction loop suppresses the chopping ripple. To facilitate bio-potential sensing, an optional DC servo loop may be employed to suppress electrode offset. The IA achieves 1 µV offset, 0.16% gain inaccuracy, 134 dB CMRR, 120 dB PSRR and a noise efficiency factor of 3.3. The instrumentation amplifier was implemented in a 65 nm CMOS technology. It occupies only 0.1 mm² chip area (0.2 mm² with the DC servo loop) and consumes 1.8 µA current (2.1 µA with the DC servo loop) from a 1 V supply.},
keywords={CMOS integrated circuits;choppers (circuits);instrumentation amplifiers;wireless sensor networks;CMOS technology;CMRR;DC servo loop;PSRR;biopotential sensing;capacitively-coupled chopper instrumentation amplifier;chopping ripple;current 1.8 muA;electrode offset suppression;low-power precision instrumentation amplifier;noise efficiency factor;positive feedback loop;power 1.8 muW;rail-to-rail input common-mode range;ripple reduction loop;size 65 nm;voltage 1 V;wireless sensor nodes;Capacitors;Choppers;Impedance;Noise;Sensors;Topology;Wireless sensor networks;Bio-signal sensing;chopping;high power efficiency;low offset;low power;precision amplifier;wireless sensor nodes},
doi={10.1109/JSSC.2011.2143610},
ISSN={0018-9200}
}